| INGAN/GAN MULTIPLE QUANTUM WELL STRUCTURES: SUBMICRON STRUCTURAL, OPTICAL, ELECTRICAL AND CHEMICAL PROPERTIES |
2013 |
7676 |
In this work, a novel approach has been implemented to investigate the submicron (30nm spatial resolution) structural and optical properties of bulk GaN, InGaN/GaN Multiple Quantum Well (MQW), p-typle AlGaN capped MQW, and full Light Emitting Diode (... |